BUK92150-55A,118 NXP Semiconductors, BUK92150-55A,118 Datasheet - Page 9

• Manufacturer Part Number: BUK92150-55A,118
• Description: MOSFET N-CH 55V 11A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK92150-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 338pF @ 25V
• Power - Max: 36W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 11 A
• Power Dissipation: 3600 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4281-2; 934056250118; BUK92150-55A /T3

NXP Semiconductors
BUK92150-55A
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
V
DD
= 14 V
2
(A)
4
I
S
30
20
10
V
0
DD
Q
0
All information provided in this document is subject to legal disclaimers.
G
= 44 V
(nC)
03nf40
T
j
= 175 °C
Rev. 05 — 24 March 2011
6
0.5
1.0
Fig 14. Input, output and reverse transfer capacitances
T
j
(pF)
= 25 °C
C
600
400
200
1.5
0
as a function of drain-source voltage; typical
values
10
V
−2
SD
03nf39
(V)
N-channel TrenchMOS logic level FET
2.0
10
−1
BUK92150-55A
1
C
C
C
oss
rss
iss
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nf46
(V)
10
2
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