IRF7404TRPBF International Rectifier, IRF7404TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7404TRPBF
• Description: MOSFET P-CH 20V 6.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7404TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1500pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 6.7A
• Power Dissipation: 2.5W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 40 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7404PBFTR

www.irf.com
100
1000
10
100
0.1
1
10
1
1.5
0.01
TOP
BOTTOM - 1.5V
2.0
-V
-V
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
GS
VGS
DS
0.1
2.5
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25°C
J
3.0
1
3.5
V
20µs PULSE WIDTH
DS
T = 150°C
20µs PULSE WIDTH
T = 25°C
J
J
= -15V
-1.5V
4.0
10
4.5
5.0
100
A
A
1000
100
0.1
2.0
1.5
1.0
0.5
0.0
10
1
0.01
-60
TOP
BOTTOM - 1.5V
I
D
-40
= -5.3A
T , Junction Temperature (°C)
-V
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
-20
J
VGS
DS
0.1
, Drain-to-Source Voltage (V)
0
20
40
1
60
20µs PULSE WIDTH
T = 150°C
J
80
-1.5V
100 120 140 160
10
V
GS
= -4.5V
100
3
A
A