IRF7404TRPBF International Rectifier, IRF7404TRPBF Datasheet - Page 4

MOSFET P-CH 20V 6.7A 8-SOIC

IRF7404TRPBF

Manufacturer Part Number
IRF7404TRPBF
Description
MOSFET P-CH 20V 6.7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF7404TRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.7A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 4.5V
Input Capacitance (ciss) @ Vds
1500pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.04Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Continuous Drain Current
6.7A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
40 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Mounting Style
SMD/SMT
Gate Charge Qg
33.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7404PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7404TRPBF
Manufacturer:
International Rectifier
Quantity:
160 282
Part Number:
IRF7404TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7404TRPBF
Quantity:
4 800
Company:
Part Number:
IRF7404TRPBF
Quantity:
28 000
4
100
3000
2000
1000
0.1
10
1
0.2
0
1
-V
0.4
-V
SD
DS
C
C
C
, Source-to-Drain Voltage (V)
oss
V
C
C
C
rss
0.6
iss
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
T = 150°C
J
0.8
gs
ds
gd
+ C
+ C
10
1.0
gd
gd
f = 1MHz
T = 25°C
, C
J
1.2
ds
SHORTED
V
GS
1.4
= 0V
1.6
100
A
100
10
10
8
6
4
2
0
1
0
0.1
I
V
D
T
T
Single Pulse
DS
A
J
= -3.2A
= 25 C
= 150 C
= -16V
OPERATION IN THIS AREA LIMITED
-V
10
Q , Total Gate Charge (nC)
DS
°
°
G
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)
FOR TEST CIRCUIT
SEE FIGURE 12
40
www.irf.com
10
1ms
10ms
50
60
100
A

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