IRF7322D1TRPBF International Rectifier, IRF7322D1TRPBF Datasheet
IRF7322D1TRPBF
Specifications of IRF7322D1TRPBF
IRF7322D1TRPBF
IRF7322D1TRPBFTR
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IRF7322D1TRPBF Summary of contents
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... Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. ...
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IRF7322D1PbF MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q ...
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VGS TOP -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -1.50V 10 1 0.1 0 Drain-to-Source Voltage (V) DS 100 ° 1.5 2.0 2.5 3 Gate-to-Source Voltage ...
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IRF7322D1PbF 1400 1MHz iss 1200 rss oss ds gd 1000 C iss 800 C oss 600 400 C ...
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SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.8 0 0.4 0.2 0 Drain Current (A) ...
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IRF7322D1PbF Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Forward Voltage Drop - 150° 125°C J ...
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SO-8 (Fetky) Package Outline 0.25 [.010 NOTES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIME ...
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IRF7322D1PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE ...