IRF7403TRPBF International Rectifier, IRF7403TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7403TRPBF
• Description: MOSFET N-CH 30V 8.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7403TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 8.5 A
• Gate Charge, Total: 57 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.022 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 42 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 8.4 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.5 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 38 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7403PBFTR; IRF7403TRPBF; IRF7403TRPBFTR

2400
2000
1600
1200
100
800
400
0.1
10
1
0
0.0
1
T = 150°C
J
C
C
C
V
V
0.5
iss
oss
rss
SD
DS
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
1.0
= 0V,
= C
= C
= C
T = 25°C
J
gs
gd
ds
+ C
+ C
1.5
10
gd
gd
f = 1MHz
, C
2.0
ds
SHORTED
V
2.5
GS
= 0V
100
3.0
A
A
100
10
20
16
12
1
8
4
0
0.1
0
I
V
T
T
Single Pulse
D
A
J
DS
= 4.0A
= 25 C
= 150 C
= 24V
OPERATION IN THIS AREA LIMITED
V
10
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)
FOR TEST CIRCUIT
SEE FIGURE 12
10
40
50
100us
1ms
10ms
100
60
A