IRF7403TRPBF International Rectifier, IRF7403TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7403TRPBF
• Description: MOSFET N-CH 30V 8.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7403TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: 8.5 A
• Gate Charge, Total: 57 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.022 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 42 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 8.4 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 35 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.5 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 38 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7403PBFTR; IRF7403TRPBF; IRF7403TRPBFTR

10.0
100
8.0
6.0
4.0
2.0
0.0
0.1
10
0.0001
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.001
75
SINGLE PULSE
100
0.01
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.1
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
t
≤ 0.1 %
r
≤ 1
J
DM
x Z
1
thJA
P
2
10
DM
t
+ T
d(off)
A
t
1
t
f
t
2
+
-
100