SI4410DYTRPBF International Rectifier, SI4410DYTRPBF Datasheet - Page 4

• Manufacturer Part Number: SI4410DYTRPBF
• Description: MOSFET N-CH 30V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4410DYTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1585pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 44 ns
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 7.7 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4410DYPBFTR; SI4410DYTRPBF; SI4410DYTRPBFTR

4
2400
2000
1600
1200
100
0.1
800
400
10
1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.4
1
Drain-to-Source Voltage
T = 150 C
J
V
0.5
V
SD
DS
Forward Voltage
,Source-to-Drain Voltage (V)
V
C
C
C
°
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.6
=
=
=
=
0V,
C
C
C
C iss
C oss
C rss
gs
gd
ds
0.7
+ C
+ C
10
f = 1MHz
gd ,
gd
T = 25 C
0.8
J
C
ds
V
SHORTED
°
GS
0.9
= 0 V
1.0
100
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
10A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
DS
10
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
20
BY R
10
DS(on)
V
V
DS
DS
30
= 24V
= 15V
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10us
100us
1ms
10ms
100
40
1000
50