SI4410DY International Rectifier, SI4410DY Datasheet

MOSFET N-CH 30V 10A 8-SOIC

SI4410DY

Manufacturer Part Number
SI4410DY
Description
MOSFET N-CH 30V 10A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of SI4410DY

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1585pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*SI4410DY

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Description
Absolute Maximum Ratings
Thermal Resistance
This N-channel HEXFET
using International Rectifier's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced
thermal characteristics that allow power dissipation of
greater that 800mW in typical board mount applications.
www.irf.com
V
I
I
I
P
P
dv/dt
E
V
T
R
D
D
DM
J,
DS
D
D
AS
GS
@ T
@ T
JA
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
@T
@T
T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
®
Power MOSFET is produced
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
S
S
S
1
2
3
4
T o p V ie w
HEXFET
8
7
6
5
-55 to + 150
Max.
Max.
±8.0
0.02
±10
±50
400
± 20
50
D
D
D
D
2.5
1.6
5.0
A
30
A
SO-8
Si4410DY
R
®
DS(on)
Power MOSFET
V
DSS
PD - 91853C
= 0.0135
= 30V
Units
Units
W/°C
°C/W
V/ns
W
mJ
°C
V
A
V
1
11/22/99

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SI4410DY Summary of contents

Page 1

... Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET Max. @ 10V GS @ 10V ±8.0 GS 0.02 - 150 Max 91853C Si4410DY ® Power MOSFET 30V DSS 0.0135 D DS(on) SO-8 Units 30 V ±10 A ±50 2.5 W 1.6 W/°C 5.0 V/ns 400 mJ ± °C ...

Page 2

... Si4410DY Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... TOP BOTTOM 100 ° 10 0.1 100 Fig 2. Typical Output Characteristics 2 ° 1 ° 1.0 0 0.0 A -60 -40 - Fig 4. Normalized On-Resistance Si4410DY VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 10A 11A V = 10V GS ...

Page 4

... Si4410DY 2400 1MHz iss rss gd 2000 oss iss 1600 1200 C oss 800 400 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 0.1 0.4 0.5 0.6 0.7 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 ...

Page 5

... SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 0.001 Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 100 125 150 0.01 ° Fig 10. Typical Power Vs. Time Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 Si4410DY 0 100 (sec ) thJA 100 5 A ...

Page 6

... Si4410DY 10V 4. rain C urren Fig 12. Typical On-Resistance Vs. Drain Current 3.0 2.5 2.0 1.5 -60 -40 - Jun ction T em peratu re (° Fig 14. Typical Threshold Voltage Vs.Temperature Fig 13. Typical On-Resistance Vs. Gate 1000 800 600 I =2 50µA D 400 200 Fig 15. Maximum Avalanche Energy I = 10A ate-to- Sou oltage (V ) ...

Page 7

... 0.25 (.010 CONTROLLING DIMENSION : INCH MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006 SO-8 Part Marking Information www.irf.com 45° 0.10 (.004 Si4410DY .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 ...

Page 8

... Si4410DY SO-8 Tape & Reel Information Dimensions are shown in millimeters (inches . . ( & LIN -48 1 & -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR JAPAN: K& ...

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