IRF1010ESTRLPBF International Rectifier, IRF1010ESTRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF1010ESTRLPBF
• Description: MOSFET N-CH 60V 84A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010ESTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3210pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 84A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 83 A
• Power Dissipation: 170 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 86.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF1010ESTRLPBF; IRF1010ESTRLPBFTR

4
6000
5000
4000
3000
2000
1000
1000
0
100
0.1
10
1
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.0
Drain-to-Source Voltage
T = 175 C
Ciss
Coss
J
Crss
V DS , Drain-to-Source Voltage (V)
V
SD
Forward Voltage
0.6
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T = 25 C
J
10
1.2
°
f = 1 MHZ
1.8
V
GS
SHORTED
= 0 V
100
2.4
1000
100
10
20
16
12
Fig 8. Maximum Safe Operating Area
1
8
4
0
0
1
Fig 6. Typical Gate Charge Vs.
I =
D
Tc = 25°C
Tj = 175°C
Single Pulse
50A
Gate-to-Source Voltage
20
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
40
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
60
V
V
V
DS
DS
DS
80
FOR TEST CIRCUIT
= 48V
= 30V
= 12V
SEE FIGURE
1msec
100
10msec
www.irf.com
100µsec
100
120
13
1000
140