IRF1010ESTRLPBF International Rectifier, IRF1010ESTRLPBF Datasheet - Page 5

• Manufacturer Part Number: IRF1010ESTRLPBF
• Description: MOSFET N-CH 60V 84A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010ESTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3210pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 84A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 83 A
• Power Dissipation: 170 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 86.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF1010ESTRLPBF; IRF1010ESTRLPBFTR

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100
80
60
40
20
0.01
0
0.1
0.00001
25
Fig 9. Maximum Drain Current Vs.
1
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
LIMITED BY PACKAGE
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
150
t , Rectangular Pulse Duration (sec)
1
175
0.001
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
≤ 0.1 %
J
≤ 1
0.01
DM
x Z
1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
+
-
5
0.1