IRLZ34NPBF International Rectifier, IRLZ34NPBF Datasheet - Page 3
![MOSFET N-CH 55V 30A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRLZ34NPBF
Manufacturer Part Number
IRLZ34NPBF
Description
MOSFET N-CH 55V 30A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRLZ34NPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 5V
Input Capacitance (ciss) @ Vds
880pF @ 25V
Power - Max
68W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
30 A
Gate Charge, Total
25 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
68 W
Resistance, Drain To Source On
0.035 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
21 ns
Time, Turn-on Delay
8.9 ns
Transconductance, Forward
11 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±16 V
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
60 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
27 A
Mounting Style
Through Hole
Gate Charge Qg
16.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLZ34NPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLZ34NPBF
Manufacturer:
IR
Quantity:
21 490
Part Number:
IRLZ34NPBF
Manufacturer:
IR
Quantity:
20 000
1000
1000
100
0.1
100
10
0.1
10
1
1
0.1
2
TOP
BOTTOM 2.5V
3
V
V
GS
15V
DS
VGS
12V
10V
8.0V
6.0V
4.0V
3.0V
T = 25°C
J
4
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
5
T = 175°C
2.5V
J
6
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
7
= 25V
10
8
9
100
10
A
A
1000
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20
TOP
BOTTOM 2.5V
I
D
= 27A
T , Junction Temperature (°C)
V
J
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
0
, Drain-to-Source Voltage (V)
20
1
40
60
2.5V
80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
J
10
V
GS
= 10V
100
A
A