IRLZ34NPBF International Rectifier, IRLZ34NPBF Datasheet - Page 3

• Manufacturer Part Number: IRLZ34NPBF
• Description: MOSFET N-CH 55V 30A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLZ34NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 5V
• Input Capacitance (ciss) @ Vds: 880pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 30 A
• Gate Charge, Total: 25 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 68 W
• Resistance, Drain To Source On: 0.035 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 21 ns
• Time, Turn-on Delay: 8.9 ns
• Transconductance, Forward: 11 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 60 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 27 A
• Mounting Style: Through Hole
• Gate Charge Qg: 16.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLZ34NPBF

1000
1000
100
0.1
100
10
0.1
10
1
1
0.1
2
TOP
BOTTOM 2.5V
3
V
V
GS
15V
DS
VGS
12V
10V
8.0V
6.0V
4.0V
3.0V
T = 25°C
J
4
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
5
T = 175°C
2.5V
J
6
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
7
= 25V
10
8
9
100
10
A
A
1000
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20
TOP
BOTTOM 2.5V
I
D
= 27A
T , Junction Temperature (°C)
V
J
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
0
, Drain-to-Source Voltage (V)
20
1
40
60
2.5V
80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
J
10
V
GS
= 10V
100
A
A