IRF6611 International Rectifier, IRF6611 Datasheet - Page 5

• Manufacturer Part Number: IRF6611
• Description: MOSFET N-CH 30V 32A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6611

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.6 mOhm @ 27A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4860pF @ 15V
• Power - Max: 3.9W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6611TR

Fig 12. Maximum Drain Current vs. Case Temperature
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Fig 10. Typical Source-Drain Diode Forward Voltage
1000
160
140
120
100
100
80
60
40
20
10
0
1
0
25
0.0
0.5
V SD , Source-to-Drain Voltage (V)
Limited by package
50
T C , Case Temperature (°C)
1.0
75
1.5
T J = 150°C
T J = 25°C
T J = 40°C
Fig 14. Maximum Avalanche Energy vs. Drain Current
2.0
100
1400
1200
1000
800
600
400
200
2.5
0
V GS = 0V
25
125
3.0
Starting T J , Junction Temperature (°C)
50
150
3.5
75
100
Fig 13. Threshold Voltage vs. Temperature
1000
TOP
BOTTOM 22A
100
0.1
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Fig11. Maximum Safe Operating Area
1
-75
0
125
Ta = 25°C
Tj = 150°C
Single Pulse
I D
11A
13A
-50
V DS , Drain-to-Source Voltage (V)
150
-25
0
I D = 50µA
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
25
10msec
1
50
1msec
75
100µsec
10
100 125 150
100
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