IRF6611 International Rectifier, IRF6611 Datasheet - Page 6

MOSFET N-CH 30V 32A DIRECTFET

IRF6611

Manufacturer Part Number
IRF6611
Description
MOSFET N-CH 30V 32A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6611

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.6 mOhm @ 27A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 4.5V
Input Capacitance (ciss) @ Vds
4860pF @ 15V
Power - Max
3.9W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRF6611TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6611TR1
Manufacturer:
IR
Quantity:
1 710
Fig 16a. Unclamped Inductive Test Circuit
Fig 15a. Gate Charge Test Circuit
6
12V
V
GS
R G
20V
GS
Same Type as D.U.T.
V DS
Fig 17a. Switching Time Test Circuit
Current Regulator
Duty Factor < 0.1%
Pulse Width < 1µs
.2µF
V
t p
GS
50KΩ
3mA
I AS
Current Sampling Resistors
D.U.T
V
.3µF
DS
0.01 Ω
L
I
G
D.U.T.
D.U.T
I
D
15V
L
D
V
DRIVER
+
-
DD
V
DS
+
-
+
-
V DD
A
90%
V
10%
V
DS
Fig 15b. Gate Charge Waveform
GS
Fig 16b. Unclamped Inductive Waveforms
I
AS
Vgs(th)
Fig 17b. Switching Time Waveforms
Qgs1 Qgs2
Vds
t
d(on)
t
r
Qgd
t p
Qgodr
t
d(off)
V
(BR)DSS
t
f
www.irf.com
Vgs
Id

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