IRF6637TR1PBF International Rectifier, IRF6637TR1PBF Datasheet - Page 2
![MOSFET N-CH 30V 14A DIRECTFET](/photos/5/49/54944/irf6637tr1pbf_sml.jpg)
IRF6637TR1PBF
Manufacturer Part Number
IRF6637TR1PBF
Description
MOSFET N-CH 30V 14A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6637TR1PBF.pdf
(10 pages)
Specifications of IRF6637TR1PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.7 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
2.35V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1330pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MP
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
14 A
Power Dissipation
89 W
Gate Charge Qg
11 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6637TR1PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF6637TR1PBF
Manufacturer:
SHARP
Quantity:
3 000
Notes:
∆ΒV
∆V
IRF6637PbF
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
g
Q
Q
Q
Q
sw
oss
G
iss
oss
rss
rr
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) g
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
38
30
1330
-5.4
–––
–––
–––
430
150
–––
–––
–––
–––
–––
–––
5.7
8.2
1.8
3.1
1.0
4.0
2.9
5.0
9.9
1.2
3.8
26
11
12
15
14
13
20
-100
10.8
2.35
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
110
1.0
6.0
1.0
7.7
17
53
20
30
mV/°C
mV/°C
mΩ
nC
nC
µA
nA
nC
pF
ns
ns
Ω
V
V
V
S
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 15
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 500A/µs i
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
= 11A
= 11A
= 25°C, I
= 25°C, I
= V
= 24V, V
= 24V, V
= 15V, I
= 15V
= 16V, V
= 15V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 16V, V
= 0V
GS
, I
D
Conditions
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
GS
GS
= 11A
= 11A, V
= 250µA
= 11A
= 14A i
= 11A i
= 0V
= 0V, T
= 0V
= 4.5V i
D
GS
www.irf.com
= 1mA
J
= 125°C
= 0V i