IRF6619TR1 International Rectifier, IRF6619TR1 Datasheet - Page 10

• Manufacturer Part Number: IRF6619TR1
• Description: MOSFET N-CH 20V 30A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6619TR1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5040pF @ 10V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.65 m Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 9.3 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 71 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6619TR1TR

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/