IRF6619TR1 International Rectifier, IRF6619TR1 Datasheet - Page 10
![MOSFET N-CH 20V 30A DIRECTFET](/photos/5/49/54951/irf6619tr1_sml.jpg)
IRF6619TR1
Manufacturer Part Number
IRF6619TR1
Description
MOSFET N-CH 20V 30A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6619.pdf
(10 pages)
Specifications of IRF6619TR1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.2 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2.45V @ 250µA
Gate Charge (qg) @ Vgs
57nC @ 4.5V
Input Capacitance (ciss) @ Vds
5040pF @ 10V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Configuration
Single Quad Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.65 m Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
2.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
9.3 ns
Minimum Operating Temperature
- 40 C
Rise Time
71 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRF6619TR1TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF6619TR1PBF
Manufacturer:
IR
Quantity:
654
Part Number:
IRF6619TR1PBF
Manufacturer:
IR
Quantity:
20 000
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/