IRF6619TR1 International Rectifier, IRF6619TR1 Datasheet - Page 5

• Manufacturer Part Number: IRF6619TR1
• Description: MOSFET N-CH 20V 30A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6619TR1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5040pF @ 10V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.65 m Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 9.3 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 71 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6619TR1TR

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Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
1000.0
100.0
10.0
1000
180
160
140
120
100
0.01
1.0
0.1
100
80
60
40
20
0.1
10
0
1
1.0E-06
0.2
25
Duty Cycle = Single Pulse
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
0.6
1.0E-05
0.01
0.05
0.10
LIMITED BY PACKAGE
75
1.0
T J = 150°C
T J = 25°C
T J = -40°C
Fig 14. Typical Avalanche Current vs.Pulsewidth
100
1.0E-04
1.4
V GS = 0V
125
150
1.8
1.0E-03
tav (sec)
1.0E-02
Fig 13. Typical Threshold Voltage vs. Junction
2.5
2.0
1.5
1.0
0.5
1000
100
0.1
10
-75
1
Allowed avalanche Current vs
avalanche
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
Fig11. Maximum Safe Operating Area
0.01
1.0E-01
T A = 25°C
Tj = 150°C
Single Pulse
-50
T J , Junction Temperature ( °C )
V DS , Drain-toSource Voltage (V)
Temperature
-25
0.10
pulsewidth,
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
1.0E+00
25
1.00
10msec
50
tav
100µsec
I D = 250µA
1msec
75
10.00
1.0E+01
100 125
100.00
150
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