IRF6619TR1 International Rectifier, IRF6619TR1 Datasheet - Page 5
![MOSFET N-CH 20V 30A DIRECTFET](/photos/5/49/54951/irf6619tr1_sml.jpg)
IRF6619TR1
Manufacturer Part Number
IRF6619TR1
Description
MOSFET N-CH 20V 30A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6619.pdf
(10 pages)
Specifications of IRF6619TR1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.2 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2.45V @ 250µA
Gate Charge (qg) @ Vgs
57nC @ 4.5V
Input Capacitance (ciss) @ Vds
5040pF @ 10V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Configuration
Single Quad Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.65 m Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
2.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
9.3 ns
Minimum Operating Temperature
- 40 C
Rise Time
71 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRF6619TR1TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF6619TR1PBF
Manufacturer:
IR
Quantity:
654
Part Number:
IRF6619TR1PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
1000.0
100.0
10.0
1000
180
160
140
120
100
0.01
1.0
0.1
100
80
60
40
20
0.1
10
0
1
1.0E-06
0.2
25
Duty Cycle = Single Pulse
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
0.6
1.0E-05
0.01
0.05
0.10
LIMITED BY PACKAGE
75
1.0
T J = 150°C
T J = 25°C
T J = -40°C
Fig 14. Typical Avalanche Current vs.Pulsewidth
100
1.0E-04
1.4
V GS = 0V
125
150
1.8
1.0E-03
tav (sec)
1.0E-02
Fig 13. Typical Threshold Voltage vs. Junction
2.5
2.0
1.5
1.0
0.5
1000
100
0.1
10
-75
1
Allowed avalanche Current vs
avalanche
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
Fig11. Maximum Safe Operating Area
0.01
1.0E-01
T A = 25°C
Tj = 150°C
Single Pulse
-50
T J , Junction Temperature ( °C )
V DS , Drain-toSource Voltage (V)
Temperature
-25
0.10
pulsewidth,
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
1.0E+00
25
1.00
10msec
50
tav
100µsec
I D = 250µA
1msec
75
10.00
1.0E+01
100 125
100.00
150
5