IRF630NLPBF International Rectifier, IRF630NLPBF Datasheet - Page 6

• Manufacturer Part Number: IRF630NLPBF
• Description: MOSFET N-CH 200V 9.3A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF630NLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 25V
• Power - Max: 82W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 82 W
• Mounting Style: Through Hole
• Gate Charge Qg: 23.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF630NLPBF

IRF630N/S/LPbF
www.irf.com
V
I
G
AS
Q
GS
R G
20V
V DS
t p
Charge
Q
Q
GD
G
t p
I AS
D.U.T
0.01 Ω
L
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
200
150
100
50
0
25
Starting T , Junction Temperature ( C)
12V
V
50
GS
Same Type as D.U.T.
Current Regulator
.2µF
J
75
50KΩ
3mA
Current Sampling Resistors
100
.3µF
I
G
125
TOP
BOTTOM
D.U.T.
I
D
150
2.2A
3.8A
5.4A
I D
+
-
°
V
6
DS
175