IRF7832TR International Rectifier, IRF7832TR Datasheet - Page 3

• Manufacturer Part Number: IRF7832TR
• Description: MOSFET N-CH 30V 20A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7832TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.32V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4310pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1000
1000
0.01
100
100
0.1
10
10
1
0
Fig 3. Typical Transfer Characteristics
1
Fig 1. Typical Output Characteristics
2.0
0.1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2.5
1
2.25V
T J = 25°C
V DS = 15V
20µs PULSE WIDTH
3.0
10
20µs PULSE WIDTH
Tj = 25°C
TOP
BOTTOM
100
3.5
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1000
4.0
1000
100
2.0
1.5
1.0
0.5
0.0
10
1
Fig 2. Typical Output Characteristics
-60 -40 -20
0.1
Fig 4. Normalized On-Resistance
V GS = 4.5V
I D = 16A
V DS , Drain-to-Source Voltage (V)
T J, Junction Temperature (°C )
Vs. Temperature
1
0
2.25V
20
40
10
20µs PULSE WIDTH
Tj = 150°C
60
IRF7832
80 100 120 140 160
TOP
BOTTOM
100
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1000
3