IRF7832TR International Rectifier, IRF7832TR Datasheet - Page 3
![MOSFET N-CH 30V 20A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7832TR
Manufacturer Part Number
IRF7832TR
Description
MOSFET N-CH 30V 20A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7832TR.pdf
(10 pages)
Specifications of IRF7832TR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.32V @ 250µA
Gate Charge (qg) @ Vgs
51nC @ 4.5V
Input Capacitance (ciss) @ Vds
4310pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7832TRPBF
Manufacturer:
IR
Quantity:
3 533
Part Number:
IRF7832TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
1000
1000
0.01
100
100
0.1
10
10
1
0
Fig 3. Typical Transfer Characteristics
1
Fig 1. Typical Output Characteristics
2.0
0.1
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2.5
1
2.25V
T J = 25°C
V DS = 15V
20µs PULSE WIDTH
3.0
10
20µs PULSE WIDTH
Tj = 25°C
TOP
BOTTOM
100
3.5
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1000
4.0
1000
100
2.0
1.5
1.0
0.5
0.0
10
1
Fig 2. Typical Output Characteristics
-60 -40 -20
0.1
Fig 4. Normalized On-Resistance
V GS = 4.5V
I D = 16A
V DS , Drain-to-Source Voltage (V)
T J, Junction Temperature (°C )
Vs. Temperature
1
0
2.25V
20
40
10
20µs PULSE WIDTH
Tj = 150°C
60
IRF7832
80 100 120 140 160
TOP
BOTTOM
100
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.25V
1000
3