IRF7832TR International Rectifier, IRF7832TR Datasheet - Page 7

• Manufacturer Part Number: IRF7832TR
• Description: MOSFET N-CH 30V 20A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7832TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.32V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4310pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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R
-
D.U.T
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Fig 18.
+
-
•
•
•
•
SD
Vgs(th)
Qgs1 Qgs2
Vds
•
•
•
-
„
G
Fig 19. Gate Charge Waveform
HEXFET
+
Qgd
V
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Qgodr
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
for N-Channel
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
Vgs
Diode Recovery
Current
dv/dt
Forward Drop
Id
di/dt
IRF7832
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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