IRF7832TR International Rectifier, IRF7832TR Datasheet - Page 7
![MOSFET N-CH 30V 20A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7832TR
Manufacturer Part Number
IRF7832TR
Description
MOSFET N-CH 30V 20A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7832TR.pdf
(10 pages)
Specifications of IRF7832TR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.32V @ 250µA
Gate Charge (qg) @ Vgs
51nC @ 4.5V
Input Capacitance (ciss) @ Vds
4310pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7832TRPBF
Manufacturer:
IR
Quantity:
3 533
Part Number:
IRF7832TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
+
R
-
D.U.T
Fig 18.
+
-
•
•
•
•
SD
Vgs(th)
Qgs1 Qgs2
Vds
•
•
•
-
G
Fig 19. Gate Charge Waveform
HEXFET
+
Qgd
V
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Qgodr
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
for N-Channel
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
Vgs
Diode Recovery
Current
dv/dt
Forward Drop
Id
di/dt
IRF7832
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
7