IRF9Z34NLPBF International Rectifier, IRF9Z34NLPBF Datasheet - Page 3

• Manufacturer Part Number: IRF9Z34NLPBF
• Description: MOSFET P-CH 55V 19A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9Z34NLPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 19 A
• Power Dissipation: 68 W
• Mounting Style: Through Hole
• Gate Charge Qg: 23.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF9Z34NLPBF

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