IRFU4615PBF International Rectifier, IRFU4615PBF Datasheet - Page 4

• Manufacturer Part Number: IRFU4615PBF
• Description: MOSFET N-CH 150V 33A IPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU4615PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 42 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1750pF @ 50V
• Power - Max: 144W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 33 A
• Power Dissipation: 144 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 26 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
100
1.0
10
Fig 11. Typical C
0.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
35
30
25
20
15
10
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
5
0
-20
25
T J = 175°C
0.4
V SD , Source-to-Drain Voltage (V)
0
V DS, Drain-to-Source Voltage (V)
Case Temperature
0.6
50
Forward Voltage
20
T C , Case Temperature (°C)
0.8
OSS
40
75
T J = 25°C
Stored Energy
60
1.0
100
80 100 120 140 160
1.2
V GS = 0V
125
1.4
150
1.6
175
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
1000
500
450
400
350
300
250
200
150
100
100
190
185
180
175
170
165
160
155
150
145
140
0.1
50
10
0
1
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
10
10msec
DC
1msec
100µsec
100
TOP
BOTTOM 21A
125
100
150
I D
5.3A
2.8A
www.irf.com
1000
175