IRF3707PBF International Rectifier, IRF3707PBF Datasheet - Page 4

• Manufacturer Part Number: IRF3707PBF
• Description: MOSFET N-CH 30V 62A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3707PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1990pF @ 15V
• Power - Max: 87W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3707PBF

IRF3707S/LPbF
4
3000
2500
2000
1500
1000
1000
500
100
0.1
10
0
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
T = 175 C
J
V
V
DS
SD
0.6
V
C
C
C
Forward Voltage
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
°
GS
iss
rss
oss
C oss
C rss
C iss
=
=
=
=
0V,
C
C
C
gs
gd
ds
T = 25 C
1.0
+ C
+ C
J
10
f = 1MHz
gd ,
gd
°
C
ds
1.4
V
SHORTED
GS
= 0 V
1.8
100
1000
10
100
8
6
4
2
0
10
1
0
Fig 8. Maximum Safe Operating Area
I =
Fig 6. Typical Gate Charge Vs.
1
D
T
T
Single Pulse
C
J
= 25 C
= 175 C
24.8A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
°
G
°
10
, Drain-to-Source Voltage (V)
BY R
20
10
DS(on)
V
DS
= 15V
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30
10us
100us
1ms
10ms
40
100