IRLR7821 International Rectifier, IRLR7821 Datasheet

MOSFET N-CH 30V 65A DPAK

IRLR7821

Manufacturer Part Number
IRLR7821
Description
MOSFET N-CH 30V 65A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR7821

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
65A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Input Capacitance (ciss) @ Vds
1030pF @ 15V
Power - Max
75W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR7821

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Applications
l
l
l
l
l
Benefits
www.irf.com
Notes  through
V
V
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJC
θJA
θJA
and Current
for Telecom and Industrial Use
@ T
@ T
Converters with Synchronous Rectification
High Frequency Synchronous Buck
High Frequency Isolated DC-DC
Very Low RDS(on) at 4.5V V
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
Converters for Computer Processor Power
@T
@T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
are on page 11
Parameter
Parameter
GS
GS
GS
@ 10V
@ 10V
V
30V
DSS
Typ.
–––
–––
–––
HEXFET Power MOSFET
-55 to + 175
R
Max.
65
47
37.5
0.50
± 20
260
IRLR7821
30
75
DS(on)
f
f
D-Pak
10m
Max.
110
2.0
50
IRLR7821
IRLU7821
max
IRLU7821
I-Pak
10nC
Units
Units
Qg
W/°C
°C/W
09/29/06
°C
W
V
A
1

Related parts for IRLR7821

IRLR7821 Summary of contents

Page 1

... GS @ 10V GS @ 10V GS Typ. ––– gà ––– ––– IRLR7821 IRLU7821 HEXFET Power MOSFET R max Qg DS(on) 10m 10nC D-Pak I-Pak IRLR7821 IRLU7821 Max. Units 30 V ± 260 75 W 37.5 0.50 W/°C - 175 °C Max. Units 2.0 50 ° ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

VGS TOP 10V 4.5V 3.7V 1000 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 100 10 1 2.5V 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 10 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...

Page 5

LIMITED BY PACKAGE 100 125 ° Case Temperature ( C) C Fig 9. Maximum Drain Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 ...

Page 6

125° 25° Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V DRIVER D.U.T ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 18. Vds Vgs(th) Qgs1 Qgs2 www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V ...

Page 8

Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET loss conduction switching drive This can be expanded and approximated by × loss rms ds(on ) ⎛ ...

Page 9

EXAMPL E: T HIS IS AN IRF R120 WIT EMBLY LOT CODE 1234 AS S EMB LED ON WW 16, 2001 EMBLY LINE "A" Note: "P" embly line pos ...

Page 10

EXAMPLE: THIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 2001 IN THE AS S EMBLY LINE "A" Note: "P" in ass embly line position indicates Lead-Free" OR INTERNATIONAL RECTIFIER 10 INTERNATIONAL ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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