IRLR7821 International Rectifier, IRLR7821 Datasheet - Page 6

• Manufacturer Part Number: IRLR7821
• Description: MOSFET N-CH 30V 65A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR7821

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1030pF @ 15V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR7821

6
R G
20V
VGS
V DS
Fig 14. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
t p
30
25
20
15
10
Fig 16. Switching Time Test Circuit
5
0
I AS
D.U.T
2
Duty Factor < 0.1%
0.01 Ω
L
Pulse Width < 1µs
V
GS
V GS , Gate -to -Source Voltage (V)
3
V
and Waveform
DS
15V
4
DRIVER
+
-
5
V DD
D.U.T
A
I
T J = 25°C
AS
L
D
6
V
DD
T J = 125°C
+
7
-
t p
8
I D = 15A
9
V
(BR)DSS
10
Fig 17. Switching Time Waveforms
1000
90%
800
600
400
200
V
10%
V
0
DS
Fig 13. Maximum Avalanche Energy
25
GS
Fig 15. Gate Charge Test Circuit
Starting Tj, Junction Temperature
t
d(on)
50
12V
V
GS
vs. Drain Current
t
Same Type as D.U.T.
r
Current Regulator
.2µF
75
50KΩ
3mA
Current Sampling Resistors
.3µF
I
100
G
t
d(off)
D.U.T.
I
D
t
f
TOP
BOTTOM
125
www.irf.com
+
-
V
( C)
DS
°
150
4.9A
8.5A
12A
I D
175