IRF4905PBF International Rectifier, IRF4905PBF Datasheet - Page 2
![MOSFET P-CH 55V 74A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF4905PBF
Manufacturer Part Number
IRF4905PBF
Description
MOSFET P-CH 55V 74A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRF4905PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 38A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
74A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
3400pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Channel Type
P
Current, Drain
-74 A
Gate Charge, Total
180 nC
Package Type
TO-220AB
Polarization
P-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
0.02 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
61 ns
Time, Turn-on Delay
18 ns
Transconductance, Forward
21 S
Voltage, Breakdown, Drain To Source
-55 V
Voltage, Drain To Source
–55 V
Voltage, Forward, Diode
-1.6 V
Voltage, Gate To Source
±20 V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.02Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Drain Current (max)
74A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 74 A
Mounting Style
Through Hole
Gate Charge Qg
120 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF4905PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF4905PBF
Manufacturer:
IR
Quantity:
21 000
Company:
Part Number:
IRF4905PBF
Manufacturer:
IR
Quantity:
25 500
Part Number:
IRF4905PBF
Manufacturer:
IR
Quantity:
20 000
IRF4905PbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
I
I
V
t
Q
t
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
DSS
GSS
S
d(on)
f
SM
on
r
d(off)
rr
fs
S
D
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
R
(BR)DSS
max. junction temperature. ( See fig. 11 )
Starting T
G
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
= 25°C, L = 1.3mH
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
AS
= -38A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
I
T
Pulse width ≤ 300µs; duty cycle ≤ 2%.
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
–––
Min. Typ. Max. Units
SD
-55
21
–––
–––
–––
–––
–––
–––
J
≤ 175°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ -38A, di/dt ≤ -270A/µs, V
-0.05 –––
3400 –––
1400 –––
–––
––– 0.02
–––
–––
–––
––– -250
–––
––– -100
–––
–––
–––
640
–––
–––
–––
230
4.5
89
18
99
61
96
7.5
-4.0
–––
-260
-1.6
–––
–––
100
180
–––
–––
–––
–––
–––
–––
130
350
-25
32
86
-74
V/°C
µA
nA
ns
nH
nC
ns
nC
pF
V
Ω
V
A
V
S
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -38A
= -38A
= 25°C, I
= 25°C, I
DD
= 2.5Ω
= 0.72Ω, See Fig. 10
= V
= -25V, I
= -55V, V
= -44V, V
= -10V, See Fig. 6 and 13
= 0V, I
= -10V, I
= 20V
= -20V
= -44V
= 0V
= -25V
= -28V
≤ V
GS
(BR)DSS
, I
D
F
S
D
= -250µA
= -38A
D
D
Conditions
= -38A, V
GS
Conditions
= -250µA
GS
= -38A
= -38A
,
= 0V, T
= 0V
D
= -1mA
GS
G
J
= 0V
= 150°C
G
S
+L
D
S
D
)
S
D