IRF4905PBF International Rectifier, IRF4905PBF Datasheet - Page 6

• Manufacturer Part Number: IRF4905PBF
• Description: MOSFET P-CH 55V 74A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF4905PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 38A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 74A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 3400pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: P
• Current, Drain: -74 A
• Gate Charge, Total: 180 nC
• Package Type: TO-220AB
• Polarization: P-Channel
• Power Dissipation: 200 W
• Resistance, Drain To Source On: 0.02 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 61 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 21 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.6 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.02Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 74A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 74 A
• Mounting Style: Through Hole
• Gate Charge Qg: 120 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF4905PBF

IRF4905PbF
Fig 12a. Unclamped Inductive Test Circuit
-10V
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
V
I
AS
G
R
-20V
G
V DS
Q
GS
t p
I AS
D.U.T
t p
0.01 Ω
L
Q
Charge
Q
GD
G
DRIVER
V
(BR)DSS
15V
V DD
A
2500
2000
1500
1000
500
0
25
Fig 13b. Gate Charge Test Circuit
Fig 12c. Maximum Avalanche Energy
12V
Starting T , Junction Temperature (°C)
V
GS
50
Same Type as D.U.T.
Current Regulator
.2µF
J
Vs. Drain Current
75
50KΩ
-3mA
Current Sampling Resistors
.3µF
100
I
G
D.U.T.
125
TOP
BOTTOM
I
D
+
-
150
V
DS
-27A
-16A
-38A
I
D
175
A