RJK03B9DPA-00#J53 Renesas Electronics America, RJK03B9DPA-00#J53 Datasheet - Page 3

• Manufacturer Part Number: RJK03B9DPA-00#J53
• Description: MOSFET N-CH 30V 30A W-PAK
• Manufacturer: Renesas Electronics America

Specifications of RJK03B9DPA-00#J53

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Gate Charge (qg) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1110pF @ 10V
• Power - Max: 25W
• Mounting Type: Surface Mount
• Package / Case: WPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: RJK03B9DPA-00#J53TR

RJK03B9DPA
Main Characteristics
REJ03G1791-0320 Rev.3.20
May 12, 2010
400
300
200
100
40
30
20
10
16
12
20
0
8
4
0
Drain to Source Saturation Voltage vs.
0
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
10 V
Typical Output Characteristics
4.5 V
Case Temperature Tc (°C)
3.0V
Gate to Source Voltage
4
2
50
4
8
100
2.8 V
12
6
Pulse Test
Pulse Test
150
I
2.6 V
D
16
GS
8
DS
10 A
= 20 A
5 A
(V)
(V)
200
20
10
1000
100
Static Drain to Source On State Resistance
100
30
16
12
10
20
0.1
10
8
4
3
1
1
0
0.1
1
Drain to Source Voltage V
Gate to Source Voltage V
Operation in
this area is
limited by R
Pulse Test
Tc = 25 °C
1 shot Pulse
V
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
Tc = 75°C
V
3
= 10 V
GS
PW = 10 ms
1
Drain Current I
= 4.5 V
vs. Drain Current
10 V
10
1
DS(on)
2
30
25°C
–25°C
3
100
D
10
(A)
4
GS
300
DS
Preliminary
(V)
(V)
Page 3 of 6
1000
100
5