RJK03B9DPA-00#J53 Renesas Electronics America, RJK03B9DPA-00#J53 Datasheet - Page 4

• Manufacturer Part Number: RJK03B9DPA-00#J53
• Description: MOSFET N-CH 30V 30A W-PAK
• Manufacturer: Renesas Electronics America

Specifications of RJK03B9DPA-00#J53

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Gate Charge (qg) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1110pF @ 10V
• Power - Max: 25W
• Mounting Type: Surface Mount
• Package / Case: WPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Other names: RJK03B9DPA-00#J53TR

RJK03B9DPA
REJ03G1791-0320 Rev.3.20
May 12, 2010
Static Drain to Source On State Resistance
10
50
40
30
20
10
20
16
12
8
6
4
2
0
0
8
4
0
–25
25
0
Pulse Test
V
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
GS
Channel Temperature Derating
I
Dynamic Input Characteristics
D
Case Temperature Tc (°C)
V
0
= 30 A
DS
= 4.5 V
V
50
Gate Charge Qg (nc)
10 V
DD
8
25
= 25 V
vs. Temperature
I
10 V
D
16
75
= 5 A, 10 A, 20 A
50
V
DD
75
100
5 A, 10 A, 20 A
24
= 25 V
10 V
I
V
duty < 0.1%
Rg ≥ 50 Ω
AP
100 125 150
DD
= 8 A
= 15 V
125
32
V
GS
150
40
20
16
12
8
4
0
10000
3000
1000
300
100
30
10
50
40
30
20
10
0
0
Drain to Source Voltage V
Source to Drain Voltage V
V
f = 1 MHz
GS
Reverse Drain Current vs.
Drain to Source Voltage
= 0
Typical Capacitance vs.
0.4
Source to Drain Voltage
10 V
5 V
10
0.8
V
GS
1.2
= 0, –5 V
20
Pulse Test
1.6
Coss
Ciss
DS
Crss
SD
Preliminary
Page 4 of 6
(V)
(V)
30
2.0