NTE4151PT1G ON Semiconductor, NTE4151PT1G Datasheet

NTE4151PT1G

Manufacturer Part Number

NTE4151PT1G

Description

MOSFET P-CH 20V 760MA SC-89

Manufacturer

ON Semiconductor

Type

Small Signalr

Datasheet

1.NTE4151PT1G.pdf (6 pages)

Specifications of NTE4151PT1G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

360 mOhm @ 350mA, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

760mA

Vgs(th) (max) @ Id

450mV @ 250µA

Gate Charge (qg) @ Vgs

2.1nC @ 4.5V

Input Capacitance (ciss) @ Vds

156pF @ 5V

Power - Max

313mW

Mounting Type

Surface Mount

Package / Case

SC-62, SOT-89, TO-243 (3 Leads + Tab)

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.36 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

0.4 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 6 V

Continuous Drain Current

0.76 A

Power Dissipation

313 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.36Ohm

Drain-source On-volt

20V

Gate-source Voltage (max)

±6V

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SC-89

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTE4151PT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTE4151PT1G

Manufacturer:

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTE4151PT1G

Manufacturer:

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTE4151PT1G

Manufacturer:

PANJIT

Quantity:

9 095

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTE4151PT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 6
Download datasheet (67Kb)

NTA4151P, NTE4151P

Small Signal MOSFET

−20 V, −760 mA, Single P−Channel,

Gate Zener, SC−75, SC−89

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq

THERMAL RESISTANCE RATINGS

September, 2006 − Rev. 5

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain Current

(Note 1)

Power Dissipation (Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature

Continuous Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8 in from case for 10 s)

Gate−to−Source ESD Rating −

Junction−to−Ambient − Steady State (Note 1)

Cameras, etc.

Low R

Small Outline Package (1.6 x 1.6 mm)

SC−75 Standard Gullwing Package

ESD Protected Gate

Pb−Free Packages are Available

High Side Load Switch

DC−DC Conversion

Small Drive Circuits

Battery Operated Systems such as Cell Phones, PDAs, Digital

[1 oz] including traces).

DS(on)

(Human Body Model, Method 3015)

for Higher Efficiency and Longer Battery Life

Parameter

SC−75

SC−89

= 25°C unless otherwise stated)

Steady State

tp =10 ms

SC−75

SC−89

Symbol

ESD

DSS

STG

qJA

±1000

−55 to

Value

−760

−250

1800

±6.0

−20

301

313

150

260

415

400

Units

°C/W

°C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

SC−75 / SOT−416

*Date Code orientation may vary depending

(BR)DSS

−20 V

upon manufacturing location.

CASE 463C

(Note: Microdot may be in either location)

CASE 463

STYLE 5

SC−89

ORDERING INFORMATION

http://onsemi.com

P−Channel MOSFET

0.26 W @ −4.5 V

0.35 W @ −2.5 V

0.49 W @ −1.8 V

= Device Code

= Date Code*

= Pb−Free Package

DS(on)

Publication Order Number:

MARKING DIAGRAM

& PIN ASSIGNMENT

TYP

Gate

xx M G

Drain

NTA4151P/D

Source

−760 mA

MAX

Related parts for NTE4151PT1G

NTE4151PT1G Summary of contents

Page 1

NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • Low R for Higher Efficiency and Longer Battery Life DS(on) • Small Outline Package (1.6 x 1.6 mm) • SC−75 Standard Gullwing Package ...

Page 2

... Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTA4151PT1 NTA4151PT1G NTE4151PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTA4151P, NTE4151P (T = 25°C unless otherwise stated) ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 0.7 0.6 −1 −1. −4 0.4 0.3 0.2 0 0.5 1.0 1.5 2.0 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 −4.5 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 0.4 0.8 1.2 1 TOTAL GATE CHARGE (nC) G Figure 7. Gate−to−Source Voltage vs. Total Gate Charge 1 0.5 0.2 ...

Page 5

... L A1 SOLDERING FOOTPRINT* 1.803 0.071 0.508 0.020 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SC−75/SOT−416 CASE 463−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 6

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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