NTE4151PT1G ON Semiconductor, NTE4151PT1G Datasheet - Page 3

• Manufacturer Part Number: NTE4151PT1G
• Description: MOSFET P-CH 20V 760MA SC-89
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of NTE4151PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 760mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 156pF @ 5V
• Power - Max: 313mW
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.36 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.4 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.76 A
• Power Dissipation: 313 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.36Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±6V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTE4151PT1GOSTR

0.6
0.5
0.4
0.3
0.2
0.1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0
0
0
0
Figure 3. On−Resistance vs. Drain Current and
−50
V
GS
I
V
D
−V
GS
= − 0.35 A
= −4.5 V
0.1
DS
Figure 1. On−Region Characteristics
−25
Figure 5. On−Resistance Variation with
= −4.5 V
0.5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
−1.5 V
T
GS
−I
J
, JUNCTION TEMPERATURE (°C)
0.2
0
D,
= −1.75 V to −4.5 V
1.0
DRAIN CURRENT (AMPS)
Temperature
25
0.3
Temperature
T
T
T
1.5
J
J
J
= 25°C
= −55°C
50
= 125°C
0.4
TYPICAL ELECTRICAL CHARACTERISTICS
75
2.0
0.5
100
NTA4151P, NTE4151P
T
−1.25 V
J
2.5
−1.0 V
0.6
= 25°C
http://onsemi.com
125
0.7
3.0
150
3
250
200
150
100
0.6
0.5
0.4
0.3
0.2
0.1
0.6
0.5
0.4
0.3
0.2
0.1
50
0
0
0
0
0
Figure 4. On−Resistance vs. Drain Current and
0
V
V
C
DS
T
GS
RSS
−V
J
= 25°C
w −10 V
= −2.5 V
GS
0.1
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
C
C
, GATE−TO−SOURCE VOLTAGE (VOLTS)
OSS
0.4
ISS
Figure 6. Capacitance Variation
4
−I
T
0.2
D,
J
= 125°C
DRAIN CURRENT (AMPS)
Temperature
0.8
8
0.3
T
T
T
J
J
J
= 125°C
= 25°C
= −55°C
0.4
T
1.2
12
J
= −55°C
T
J
0.5
= 25°C
1.6
16
0.6
2.0
0.7
20