NTK3139PT1G ON Semiconductor, NTK3139PT1G Datasheet - Page 4

• Manufacturer Part Number: NTK3139PT1G
• Description: MOSFET P-CH 20V 660MA SOT-723
• Manufacturer: ON Semiconductor

Specifications of NTK3139PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 480 mOhm @ 780mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 660mA
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Input Capacitance (ciss) @ Vds: 170pF @ 16V
• Power - Max: 310mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.48 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.2 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.78 A
• Power Dissipation: 450 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NTK3139PT1G; NTK3139PT1GOSTR

150
120
90
60
30
0
0
C
rss
C
2
iss
C
oss
−DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
4
6
8
10
2.0
1.5
1.0
0.5
0
0.4
12
Figure 9. Diode Forward Voltage vs. Current
V
GS
0.5
14
−V
= 0 V
TYPICAL CHARACTERISTICS
SD
V
T
16
, SOURCE−TO−DRAIN VOLTAGE (V)
GS
J
0.6
= 25°C
= 0 V
http://onsemi.com
18
0.7
NTK3139P
20
125°C
4
0.8
100
150°C
10
0.9
1
1
I
Figure 8. Resistive Switching Time Variation
V
V
D
GS
DD
1.0
= −200 mA
t
t
d(on)
d(off)
= −4.5 V
T
= −10 V
J
t
t
f
r
= −55°C
1.1
25°C
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
1.2
10
100