NTK3139PT1G ON Semiconductor, NTK3139PT1G Datasheet - Page 4
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NTK3139PT1G
Manufacturer Part Number
NTK3139PT1G
Description
MOSFET P-CH 20V 660MA SOT-723
Manufacturer
ON Semiconductor
Datasheet
1.NTK3139PT1G.pdf
(5 pages)
Specifications of NTK3139PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
480 mOhm @ 780mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
660mA
Vgs(th) (max) @ Id
1.2V @ 250µA
Input Capacitance (ciss) @ Vds
170pF @ 16V
Power - Max
310mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.48 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1.2 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.78 A
Power Dissipation
450 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NTK3139PT1G
NTK3139PT1GOSTR
NTK3139PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTK3139PT1G
Manufacturer:
ON
Quantity:
52 000
Company:
Part Number:
NTK3139PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTK3139PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
150
120
90
60
30
0
0
C
rss
C
2
iss
C
oss
−DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
4
6
8
10
2.0
1.5
1.0
0.5
0
0.4
12
Figure 9. Diode Forward Voltage vs. Current
V
GS
0.5
14
−V
= 0 V
TYPICAL CHARACTERISTICS
SD
V
T
16
, SOURCE−TO−DRAIN VOLTAGE (V)
GS
J
0.6
= 25°C
= 0 V
http://onsemi.com
18
0.7
NTK3139P
20
125°C
4
0.8
100
150°C
10
0.9
1
1
I
Figure 8. Resistive Switching Time Variation
V
V
D
GS
DD
1.0
= −200 mA
t
t
d(on)
d(off)
= −4.5 V
T
= −10 V
J
t
t
f
r
= −55°C
1.1
25°C
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
1.2
10
100