NTS2101PT1G ON Semiconductor, NTS2101PT1G Datasheet
NTS2101PT1G
Manufacturer Part Number
NTS2101PT1G
Description
MOSFET P-CH 8V 1.4A SOT-323
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTS2101PT1G.pdf
(5 pages)
Specifications of NTS2101PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
8V
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
6.4nC @ 5V
Input Capacitance (ciss) @ Vds
640pF @ 8V
Power - Max
290mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.1 Ohm @ 4.5 V
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.4 A
Power Dissipation
290 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
8V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Dc
05+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTS2101PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTS2101PT1G
Manufacturer:
ON
Quantity:
81 000
Company:
Part Number:
NTS2101PT1G
Manufacturer:
ON
Quantity:
81 000
Company:
Part Number:
NTS2101PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTS2101PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NTS2101P
Power MOSFET
−8.0 V, −1.4 A, Single P−Channel, SC−70
Features
•
•
•
•
Applications
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode), Continuous
Lead Temperature for Soldering Purposes
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient − t ≤ 5 s (Note 1)
Digital Cameras, PDAs, etc.
Leading Trench Technology for Low R
−1.8 V Rated for Low Voltage Gate Drive
SC−70 Surface Mount for Small Footprint (2 x 2 mm)
Pb−Free Package is Available
High Side Load Switch
Charging Circuit
Single Cell Battery Applications such as Cell Phones,
(Cu area = 1.127 in sq [1 oz] including traces).
Current (Note 1)
(Note 1)
(1/8″ from case for 10 s)
Parameter
Parameter
(T
J
Steady
Steady
t ≤ 5 s
t ≤ 5 s
State
State
= 25°C unless otherwise stated)
tp = 10 ms
T
T
T
T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 25°C
DS(on)
Symbol
Symbol
V
T
R
R
V
I
P
T
DSS
STG
T
I
DM
I
qJA
qJA
GS
D
S
J
Extending Battery Life
D
L
,
−55 to
Value
−0.46
−8.0
±8.0
−1.4
−1.1
−1.5
0.29
0.33
−3.0
Max
150
260
430
375
1
Units
Units
°C/W
°C
°C
W
W
V
V
A
A
A
A
†For information on tape and reel specifications,
NTS2101PT1
NTS2101PT1G
V
SC−70/SOT−323
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
−8.0 V
(BR)DSS
1
CASE 419
Device
STYLE 8
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
2
ORDERING INFORMATION
TS
M
G
G
117 mW @ −1.8 V
3
65 mW @ −4.5 V
78 mW @ −2.5 V
http://onsemi.com
P−Channel MOSFET
R
DS(on)
(Pb−Free)
SOT−323
SOT−323
Package
= Device Code
= Date Code*
= Pb−Free Package
MARKING DIAGRAM &
Publication Order Number:
Typ
S
D
PIN ASSIGNMENT
1
Gate
TS M G
3000/Tape & Reel
3000/Tape & Reel
Drain
G
Shipping
Source
3
NTS2101P/D
I
−1.4 A
D
2
Max
†
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NTS2101PT1G Summary of contents
Page 1
... T 260 L Symbol Max Units °C/W R 430 qJA R 375 qJA NTS2101PT1 NTS2101PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R Typ I Max DS(on −4.5 V −1 − ...
Page 2
ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance CHARGES AND CAPACITANCES Input Capacitance ...
Page 3
TYPICAL ELECTRICAL CHARACTERISTICS 8 25°C −2 6 −2 −4 4.0 2 1.0 2.0 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0. −4.5 V ...
Page 4
TYPICAL ELECTRICAL CHARACTERISTICS 2.0 4 TOTAL GATE CHARGE (nC) G Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Gate Charge NTS2101P 4 ...
Page 5
... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...