NTS2101PT1G ON Semiconductor, NTS2101PT1G Datasheet - Page 3

• Manufacturer Part Number: NTS2101PT1G
• Description: MOSFET P-CH 8V 1.4A SOT-323
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTS2101PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 6.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 640pF @ 8V
• Power - Max: 290mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 290 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 8V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Dc: 05+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTS2101PT1GOSTR

0.16
0.12
0.08
0.04
8.0
6.0
4.0
2.0
1.5
1.3
1.1
0.9
0.7
0
0
0
0
Figure 3. On−Resistance vs. Drain Current and
−50
V
GS
I
V
D
−V
GS
= −1.0 A
= −4.5 V
DS
Figure 1. On−Region Characteristics
−25
Figure 5. On−Resistance Variation with
= −4.5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
2.0
−I
1.0
J
V
, JUNCTION TEMPERATURE (°C)
0
GS
D,
DRAIN CURRENT (AMPS)
= −2.5 V to −4.5 V
−2.2 V
Temperature
25
Temperature
T
T
T
J
J
J
4.0
2.0
= 25°C
= −55°C
50
= 125°C
T
TYPICAL ELECTRICAL CHARACTERISTICS
J
= 25°C
75
−1.2 V
−1.6 V
−1.4 V
−2.0 V
−1.8 V
6.0
3.0
100
−1.0 V
http://onsemi.com
125
NTS2101P
8.0
4.0
150
3
1000
0.16
0.12
0.08
0.04
800
600
400
200
8.0
6.0
4.0
2.0
0
0
0
0
0
0
V
V
Figure 4. On−Resistance vs. Drain Current
DS
GS
−V
C
C
w −10 V
= −2.5 V
RSS
ISS
0.4
GS
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
C
2.0
−I
OSS
2
T
0.8
D,
J
and Temperature
DRAIN CURRENT (AMPS)
= 125°C
1.2
T
T
T
J
J
J
4.0
4
= 125°C
= 25°C
= −55°C
1.6
T
T
J
J
= −55°C
= 25°C
2.0
6.0
T
V
6
J
GS
= 25°C
= 0 V
2.4
8.0
2.8
8