SI1426DH-T1-E3 Vishay, SI1426DH-T1-E3 Datasheet
SI1426DH-T1-E3
Specifications of SI1426DH-T1-E3
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SI1426DH-T1-E3 Summary of contents
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... J stg Symbol sec R thJA Steady State Steady State R thJF Si1426DH Vishay Siliconix D TrenchFETr Power MOSFET D Thermally Enhanced SC-70 Package D PWM Optimized D Boost Converter in Portable Devices – Low Gate Charge (3 nC) D Low Current Synchronous Rectifier Lot Traceability and Date Code Part # Code ...
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... Si1426DH Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...
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... V – Source-to-Drain Voltage (V) SD Document Number: 71805 S-05803—Rev. A, 18-Feb-02 New Product 3.0 3.5 4 25_C J 0.8 1.0 1.2 Si1426DH Vishay Siliconix Capacitance 250 200 C iss 150 C oss 100 C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1.8 V ...
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... Si1426DH Vishay Siliconix Threshold Voltage 0.4 0.2 = 250 –0.0 –0.2 –0.4 –0.6 –0.8 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...