SI1426DH-T1-E3 Vishay, SI1426DH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1426DH-T1-E3
• Description: MOSFET N-CH 30V 2.8A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1426DH-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3.6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 115mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1426DH-T1-E3TR

Document Number: 71805
S-05803—Rev. A, 18-Feb-02
0.16
0.12
0.08
0.04
0.00
0.1
10
10
8
6
4
2
0
1
0.0
0.0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
0.5
= 3.6 A
0.2
On-Resistance vs. Drain Current
= 15 V
2
V
1.0
SD
T
Q
J
g
= 150_C
– Source-to-Drain Voltage (V)
I
0.4
– Total Gate Charge (nC)
D
V
1.5
– Drain Current (A)
Gate Charge
GS
4
= 4.5 V
2.0
0.6
6
2.5
0.8
V
3.0
GS
T
J
8
= 25_C
= 10 V
1.0
_
3.5
4.0
1.2
10
New Product
0.20
0.16
0.12
0.08
0.04
0.00
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
–25
D
I
GS
D
= 3.6 A
= 1 A
C
= 10 V
rss
2
6
T
V
V
0
J
GS
DS
– Junction Temperature (_C)
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
C
= 3.6 A
Vishay Siliconix
50
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18
6
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Si1426DH
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iss
100
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www.vishay.com
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125
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