IRF7726TRPBF International Rectifier, IRF7726TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7726TRPBF
• Description: MOSFET P-CH 30V 7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7726TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 2204pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 26mohm
• Rds(on) Test Voltage Vgs: -10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 40 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 7 A
• Power Dissipation: 1.79 W
• Gate Charge Qg: 46 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7726TRPBF; IRF7726TRPBFTR

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IRF7726PbF
Source-Drain Ratings and Characteristics
Notes:
‚
Electrical Characteristics @ T
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
R
I
rr
d(on)
r
d(off)
f
DSS
2
fs
SD
(BR)DSS
GS(th)
rr
g
gs
gd
iss
oss
rss
Repetitive rating; pulse width limited by
DS(on)
Pulse width ≤ 400µs duty cycle ≤
(BR)DSS
max. junction temperature.
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
When mounted on 1 inch square copper board, t < 10 sec.
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
-1.0
––– 0.016 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2204 –––
–––
–––
-30
10
–––
–––
––– 0.026
––– 0.040
–––
–––
–––
–––
––– -100
–––
227
107
341
220
8.0
8.1
35
32
46
15
25
-1.2
-2.5
–––
–––
100
–––
–––
341
161
–––
–––
-28
-15
-25
-1.8
53
48
69
23
38
V/°C
µC
nC
ns
pF
V
V
Ω
V
S
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
showing the
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -7.0A
= -1.0A
= 25°C, I
= 25°C, I
= 15Ω
= 6.0Ω
= V
= -10V, I
= -24V, V
= -24V, V
= -15V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V, V
= 0V
GS
Conditions
‚
, I
D
S
F
D
Conditions
= -250µA
D
D
= -1.8A, V
= -1.8A
D
GS
GS
GS
= -250µA
= -7.0A
= -7.0A
= -6.0A
‚
= 0V
= 0V, T
= -10V
D
www.irf.com
= -1mA
‚
GS
‚
J
G
= 70°C
= 0V
‚
S
D