IRF7726TRPBF International Rectifier, IRF7726TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7726TRPBF
• Description: MOSFET P-CH 30V 7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7726TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 2204pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 26mohm
• Rds(on) Test Voltage Vgs: -10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 40 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 7 A
• Power Dissipation: 1.79 W
• Gate Charge Qg: 46 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7726TRPBF; IRF7726TRPBFTR

IRF7726PbF
4
3200
2800
2400
2000
1600
1200
100
800
400
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0
0.0
1
Drain-to-Source Voltage
-V
T = 25 C
-V
J
SD
DS
Forward Voltage
1.5
,Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°
C iss
C oss
C rss
=
=
=
=
0V,
C
C
C
gs
gd
ds
3.0
+ C
+ C
10
f = 1MHz
T = 150 C
gd ,
gd
J
C
ds
4.5
°
V
SHORTED
GS
= 0 V
6.0
100
100
16
14
12
10
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0
0.1
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
-7.0A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
10
DS
Q , Total Gate Charge (nC)
G
°
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)
V
V
DS
DS
www.irf.com
40
10
=-24V
=-15V
50
100us
1ms
10ms
100
60