IRF7353D1TRPBF International Rectifier, IRF7353D1TRPBF Datasheet
IRF7353D1TRPBF
Specifications of IRF7353D1TRPBF
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IRF7353D1TRPBF Summary of contents
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... Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. ...
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IRF7353D1PbF MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q ...
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VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = 25° ...
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IRF7353D1PbF 0.040 V = 4.5V GS 0.036 0.032 0.028 0.024 V GS 0.020 Drain Current (A) D Fig 5. Typical On-Resistance Vs. Drain Current 1200 1MHz ...
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D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 100 10 1 www.irf.com Power Mosfet Characteristics 0.01 0 Rectangular Pulse Duration ...
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IRF7353D1PbF Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics ...
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SO-8 (Fetky) Package Outline 0.25 [.010 0.25 [.010 NOT DIMENS IONING & T ...
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IRF7353D1PbF SO-8 (Fetky) Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. ...