IRF8736TRPBF International Rectifier, IRF8736TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF8736TRPBF
• Description: MOSFET N-CH 30V 18A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8736TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2315pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF8736TRPBFTR

IRF8736PbF
Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13. Gate Charge Test Circuit
I
AS
12V
V
GS
R G
20V
Same Type as D.U.T.
V DS
Current Regulator
.2µF
t p
50KΩ
3mA
I AS
D.U.T
Current Sampling Resistors
0.01 Ω
t p
L
.3µF
I
G
D.U.T.
15V
I
V
D
(BR)DSS
DRIVER
+
+
-
-
V
V DD
DS
A
600
500
400
300
200
100
V
90%
10%
V
0
DS
GS
25
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
Fig 12c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
t
d(on)
50
≤ 0.1 %
≤ 1
t
r
Vs. Drain Current
75
100
TOP
BOTTOM
t
d(off)
www.irf.com
125
t
1.28A
f
1.75A
I D
14.4A
+
-
150