IRF8736TRPBF International Rectifier, IRF8736TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF8736TRPBF
• Description: MOSFET N-CH 30V 18A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8736TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2315pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF8736TRPBFTR

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+
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D.U.T
Id
ƒ
Fig 15.
+
-
Vgs
•
•
•
•
SD
•
•
•
Fig 16. Gate Charge Waveform
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Qgodr
„
G
HEXFET
+
®
+
-
Power MOSFETs
Qgd
Re-Applied
Voltage
Reverse
Recovery
Current
Qgs2
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Vgs(th)
P.W.
Vds
Qgs1
SD
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
IRF8736PbF
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
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