SI4845DY-T1-E3 Vishay, SI4845DY-T1-E3 Datasheet
SI4845DY-T1-E3
Specifications of SI4845DY-T1-E3
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SI4845DY-T1-E3 Summary of contents
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... Top View Ordering Information: Si4845DY-T1—E3 (Lead (Pb)–Free) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T Continuous Drain Current (T = 150_C) (MOSFET) = 150_C) (MOSFET Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Continuous Source Current (MOSFET Diode Conduction) ...
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... Si4845DY Vishay Siliconix Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance ...
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... Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73415 S-51110—Rev. B, 13-Jun-05 New Product _ Symbol Test Condition 125_C 75_C 125_C Si4845DY Vishay Siliconix Min Typ Max Unit 0.45 0. 0.36 0.42 0.04 0.1 0 www.vishay.com 3 ...
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... Si4845DY Vishay Siliconix Output Characteristics 0.0 0.5 1.0 1.5 V – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current and Gate Voltage 0 0.3 0.2 0.1 0 – Drain Current (A) D Gate Charge 0.0 1.3 2.6 3.9 Q – Total Gate Charge (nC) g www.vishay.com 4 New Product ...
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... 100 125 150 Safe Operating Area, Junction-to-Ambient 10 *Limited by r DS(on 25_C A Single Pulse 0.01 0 – Drain-to-Source Voltage ( minimum which Si4845DY Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 1.0 0 150_C A 0.6 0 25_C A 0.2 0 – Gate-to-Source Voltage (V) GS Single Pulse Power, Junction-to-Ambient 0.001 ...
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... Si4845DY Vishay Siliconix Power De-Rating, Junction-to-Foot 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 – Case Temperature (_C) C *The power dissipation P is based 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for b J(max) cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...
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... Single Pulse 0.01 –4 – Document Number: 73415 S-51110—Rev. B, 13-Jun-05 New Product _ –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) Si4845DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120_C/W thJA ( – ...
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... Si4845DY Vishay Siliconix Reverse Current vs. Junction Temperature 0 0.01 0.001 0.0001 – Junction Temperature (_C) J Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. http://www.vishay.com/ppg?73415. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...