SI4845DY-T1-E3 Vishay, SI4845DY-T1-E3 Datasheet - Page 2
![MOSFET P-CH 20V 2.7A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4845DY-T1-E3
Manufacturer Part Number
SI4845DY-T1-E3
Description
MOSFET P-CH 20V 2.7A 8-SOIC
Manufacturer
Vishay
Datasheet
1.SI4845DY-T1-E3.pdf
(9 pages)
Specifications of SI4845DY-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
210 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
312pF @ 10V
Power - Max
2.75W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.21 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2.1 A
Power Dissipation
1750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-27A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
345mohm
Rds(on) Test Voltage Vgs
12V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4845DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4845DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 943
Part Number:
SI4845DY-T1-E3-S
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
www.vishay.com
2
Si4845DY
Vishay Siliconix
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Temperature Coefficient
Temperature Coefficient
b
Parameter
a
a
a
a
a
DV
Symbol
DV
V
r
r
GS(th)/TJ
I
DS(on)
t
t
t
t
I
I
I
C
V
GS(th)
C
V
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
GSS
I
DSS
DSS
Q
Q
g
R
DS/TJ
SM
I
t
t
t
DS
oss
t
t
t
t
SD
iss
rss
S
rr
fs
gs
gd
a
b
r
f
r
f
g
rr
g
_
New Product
I
I
V
F
F
I
V
I
DS
D
V
D
= –2 A di/dt = 100 A/ms T
= –2 A, di/dt = 100 A/ms, T
DS
DS
^ –4 A, V
^ –4 A, V
= –10 V, V
V
V
= –20 V, V
V
= –10 V, V
V
V
V
V
V
DS
V
V
DS
V
V
I
DS
DD
DD
DD
DD
GS
S
DS
GS
Test Condition
GS
DS
= 0 V, V
w –5 V, V
= –1.9 A, V
= V
= –10 V, R
= 10 V, R
= –10 V, R
= 10 V, R
= 0 V, I
= –20 V, V
= –2.5 V, I
= –4.5 V, I
= –15 V, I
I
I
T
D
D
GEN
f = 1 MHz
GEN
GS
C
= –250 mA
= –250 mA
GS
GS
= 25 _C
GS
, I
GS
= –4.5 V, R
D
= –10 V, R
= –4.5 V, I
D
= 0 V, T
= 0 V, f = 1 MHz
GS
= –250 mA
= –250 mA
= "12 V
GS
D
D
L
L
L
L
GS
D
= –2 A
= 2.5 W
= 2.5 W
= 2.5 W
= 2.5 W
= –4.5 V
= –1 A
= –2 A
= 0 V
= 0 V
J
J
J
= 75_C
D
g
g
= 25 _C
= 25 _C
= 1 W
= –4 A
= 1 W
Min
–0.5
–20
–5
0.175
0.285
–0.85
Typ
0.72
0.65
–25
312
2.9
2.6
3.5
5.5
63
33
40
17
11
10
12
24
14
14
10
8
3
8
S-51110—Rev. B, 13-Jun-05
Document Number: 73415
"100
Max
0.210
0.345
–1.5
–2.7
–1.2
–10
4.5
–1
13
60
26
18
16
20
15
–7
40
20
6
mV/_C
mV/_C
Unit
nA
mA
mA
pF
p
nC
nC
ns
ns
ns
ns
ns
V
V
A
W
W
S
W
A
A
V