SI4845DY-T1-E3 Vishay, SI4845DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4845DY-T1-E3
• Description: MOSFET P-CH 20V 2.7A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4845DY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 210 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 312pF @ 10V
• Power - Max: 2.75W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.21 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 1750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -27A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 345mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4845DY-T1-E3TR

Notes
a.
b.
www.vishay.com
2
Si4845DY
Vishay Siliconix
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Temperature Coefficient
Temperature Coefficient
b
Parameter
a
a
a
a
a
DV
Symbol
DV
V
r
r
GS(th)/TJ
I
DS(on)
t
t
t
t
I
I
I
C
V
GS(th)
C
V
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
GSS
I
DSS
DSS
Q
Q
g
R
DS/TJ
SM
I
t
t
t
DS
oss
t
t
t
t
SD
iss
rss
S
rr
fs
gs
gd
a
b
r
f
r
f
g
rr
g
_
New Product
I
I
V
F
F
I
V
I
DS
D
V
D
= –2 A di/dt = 100 A/ms T
= –2 A, di/dt = 100 A/ms, T
DS
DS
^ –4 A, V
^ –4 A, V
= –10 V, V
V
V
= –20 V, V
V
= –10 V, V
V
V
V
V
V
DS
V
V
DS
V
V
I
DS
DD
DD
DD
DD
GS
S
DS
GS
Test Condition
GS
DS
= 0 V, V
w –5 V, V
= –1.9 A, V
= V
= –10 V, R
= 10 V, R
= –10 V, R
= 10 V, R
= 0 V, I
= –20 V, V
= –2.5 V, I
= –4.5 V, I
= –15 V, I
I
I
T
D
D
GEN
f = 1 MHz
GEN
GS
C
= –250 mA
= –250 mA
GS
GS
= 25 _C
GS
, I
GS
= –4.5 V, R
D
= –10 V, R
= –4.5 V, I
D
= 0 V, T
= 0 V, f = 1 MHz
GS
= –250 mA
= –250 mA
= "12 V
GS
D
D
L
L
L
L
GS
D
= –2 A
= 2.5 W
= 2.5 W
= 2.5 W
= 2.5 W
= –4.5 V
= –1 A
= –2 A
= 0 V
= 0 V
J
J
J
= 75_C
D
g
g
= 25 _C
= 25 _C
= 1 W
= –4 A
= 1 W
Min
–0.5
–20
–5
0.175
0.285
–0.85
Typ
0.72
0.65
–25
312
2.9
2.6
3.5
5.5
63
33
40
17
11
10
12
24
14
14
10
8
3
8
S-51110—Rev. B, 13-Jun-05
Document Number: 73415
"100
Max
0.210
0.345
–1.5
–2.7
–1.2
–10
4.5
–1
13
60
26
18
16
20
15
–7
40
20
6
mV/_C
mV/_C
Unit
nA
mA
mA
pF
p
nC
nC
ns
ns
ns
ns
ns
V
V
A
W
W
S
W
A
A
V