SI9434BDY-T1-E3 Vishay, SI9434BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI9434BDY-T1-E3
• Description: MOSFET P-CH 20V 4.5A 8-SOIC
• Manufacturer: Vishay

Specifications of SI9434BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 6.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.04 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -6.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 40mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI9434BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73050
S09-0704-Rev. B, 27-Apr-09
0.15
0.12
0.09
0.06
0.03
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 6.3 A
On-Resistance vs. Drain Current
0.2
V
= 10 V
GS
4
V
SD
= 1.8 V
3
Q
g
-
I
D
-
0.4
Source-to-Drain Voltage (V)
-
Total Gate Charge (nC)
Gate Charge
8
Drain Current (A)
T
0.6
6
J
= 150 °C
12
0.8
V
V
T
GS
GS
9
J
= 25 °C
16
= 2.5 V
= 4.5 V
1.0
20
12
1.2
0.15
0.12
0.09
0.06
0.03
0.00
2500
2000
1500
1000
1.6
1.4
1.2
1.0
0.8
0.6
500
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
rss
D
- 25
GS
= 6.3 A
= 4.5 V
1
4
T
V
0
V
J
GS
C
DS
-
C
oss
Junction Temperature (°C)
iss
-
-
Gate-to-Source Voltage (V)
25
Capacitance
Drain-to-Source Voltage (V)
2
8
I
D
50
= 6.3 A
Vishay Siliconix
Si9434BDY
3
12
75
www.vishay.com
100
4
16
125
150
5
20
3