SI9434BDY-T1-E3 Vishay, SI9434BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI9434BDY-T1-E3
• Description: MOSFET P-CH 20V 4.5A 8-SOIC
• Manufacturer: Vishay

Specifications of SI9434BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 6.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.04 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -6.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 40mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI9434BDY-T1-E3TR

Si9434BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
10 -
4
- 25
0.05
0.2
0.1
Duty Cycle = 0.5
0.02
0
Threshold Voltage
T
J
-
25
10 -
Temperature (°C)
Single Pulse
3
I
D
50
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
10 -
10
100
0.1
1
0.1
2
* V
Limited R
125
GS
Limited
I
D(on)
Single Pulse
T
Square Wave Pulse Duration (s)
A
V
minimum V
150
= 25 °C
DS
DS(on)
- Drain-to-Source Voltage (V)
1
Safe Operating Area
10 -
BV
*
DSS
1
GS
Limited
at which R
I
DS(on)
DM
10
1
Limited
50
40
30
20
10
0.001
0
is specified
1 ms
10 ms
100 ms
1 s
10 s
dc
0.01
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
-
Time (s)
T
t
A
1
= P
S09-0704-Rev. B, 27-Apr-09
t
2
0.1
DM
Document Number: 73050
Z
thJA
100
thJA
t
t
1
2
(t)
= 80 °C/W
1
600
10