SI4386DY-T1-E3 Vishay, SI4386DY-T1-E3 Datasheet

MOSFET N-CH 30V 11A 8-SOIC

SI4386DY-T1-E3

Manufacturer Part Number
SI4386DY-T1-E3
Description
MOSFET N-CH 30V 11A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4386DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 4.5V
Power - Max
1.47W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.007 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
1470 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
16A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4386DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4386DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Part Number:
SI4386DY-T1-E3
Manufacturer:
TI
Quantity:
1 444
Part Number:
SI4386DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4386DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73109
S09-0226-Rev. D, 09-Feb-09
Ordering Information: Si4386DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
G
S
S
S
0.0095 at V
0.007 at V
N-Channel Reduced Q
1
2
3
4
R
Si4386DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
DS(on)
Top View
GS
SO-8
GS
(Ω)
= 10 V
= 4.5 V
J
a
= 150 °C)
8
7
6
5
a
D
D
D
D
a
I
D
13.5
16
(A)
a
A
Q
= 25 °C, unless otherwise noted
g
Steady State
Steady State
L = 0.1 mH
(Typ.)
T
T
T
T
11
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
g
, Fast Switching MOSFET
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• PWM Optimized
• 100 % R
• DC/DC Conversion for PC
Symbol
Symbol
T
R
R
J
Available
V
V
E
I
I
P
, T
I
DM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
®
Gen II Power MOSFETs
Typical
10 s
2.8
3.1
16
13
34
71
18
2
G
N-Channel MOSFET
- 55 to 150
± 20
± 50
30
20
20
Steady State
D
S
Maximum
1.47
0.95
1.3
11
40
85
22
Vishay Siliconix
9
Si4386DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI4386DY-T1-E3

SI4386DY-T1-E3 Summary of contents

Page 1

... GS SO Top View Ordering Information: Si4386DY-T1-E3 (Lead (Pb)-free) Si4386DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si4386DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Gate Charge 150 ° 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 73109 S09-0226-Rev. D, 09-Feb- °C J 0.8 1.0 1.2 Si4386DY Vishay Siliconix 2200 C iss 1760 1320 880 C oss 440 C rss Drain-to-Source Voltage (V) DS Capacitance 1 1 1.4 1.2 1 ...

Page 4

... Si4386DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA 0.2 D 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage Limited Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 * DS(on 0 °C C Single Pulse ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73109. Document Number: 73109 S09-0226-Rev. D, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4386DY Vishay Siliconix -1 1 www.vishay.com ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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