IRF6618 International Rectifier, IRF6618 Datasheet - Page 3

• Manufacturer Part Number: IRF6618
• Description: MOSFET N-CH 30V 30A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6618

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5640pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 8.1 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 71 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6618TR

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100000
10000
1000
1000
1000
100
100
100
0.1
10
10
1
1
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
0.1
1.5
1
Fig 5. Typical Capacitance vs.
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
Drain-to-Source Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.0
C iss
C rss
C oss
1
2.7V
2.5
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 10V
≤60µs PULSE WIDTH
f = 1 MHZ
10
3.0
T J = 25°C
10
TOP
BOTTOM
3.5
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
100
4.0
100
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
1.5
1.0
0.5
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0
0
Fig 6. Typical Gate Charge vs.
I D = 24A
I D = 30A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
Gate-to-Source Voltage
10
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
20
20 40 60 80 100 120 140 160 180
1
V DS = 24V
V DS = 15V
2.7V
≤ 60µs PULSE WIDTH
Tj = 150°C
30
10
40
TOP
BOTTOM
50
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
100
60
3