IRF6618 International Rectifier, IRF6618 Datasheet - Page 3
![MOSFET N-CH 30V 30A DIRECTFET](/photos/5/53/55375/irf6618_sml.jpg)
IRF6618
Manufacturer Part Number
IRF6618
Description
MOSFET N-CH 30V 30A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6618.pdf
(11 pages)
Specifications of IRF6618
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.2 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2.35V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 4.5V
Input Capacitance (ciss) @ Vds
5640pF @ 15V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MT
Configuration
Single Quad Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 m Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
29 A
Power Dissipation
2.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
8.1 ns
Minimum Operating Temperature
- 40 C
Rise Time
71 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRF6618TR
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100000
10000
1000
1000
1000
100
100
100
0.1
10
10
1
1
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
0.1
1.5
1
Fig 5. Typical Capacitance vs.
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
Drain-to-Source Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2.0
C iss
C rss
C oss
1
2.7V
2.5
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 10V
≤60µs PULSE WIDTH
f = 1 MHZ
10
3.0
T J = 25°C
10
TOP
BOTTOM
3.5
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
100
4.0
100
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
1.5
1.0
0.5
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0
0
Fig 6. Typical Gate Charge vs.
I D = 24A
I D = 30A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
Gate-to-Source Voltage
10
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
20
20 40 60 80 100 120 140 160 180
1
V DS = 24V
V DS = 15V
2.7V
≤ 60µs PULSE WIDTH
Tj = 150°C
30
10
40
TOP
BOTTOM
50
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
100
60
3