IRF6618 International Rectifier, IRF6618 Datasheet - Page 7

• Manufacturer Part Number: IRF6618
• Description: MOSFET N-CH 30V 30A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6618

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.35V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5640pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MT
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Power Dissipation: 2.8 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 8.1 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 71 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6618TR

www.irf.com
DirectFET™ Outline Dimension, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
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IT9(Ã7I TRIFFC AÃ
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MIN
1.78
6.25
4.80
3.85
0.35
0.78
0.88
0.98
0.63
0.88
2.46
0.59
0.03
0.08
METRIC
DIMENSIONS
MAX
1.82
1.02
1.01
6.35
5.05
3.95
0.45
0.82
0.92
0.67
2.63
0.70
0.08
0.17
0.246
0.189
0.152
0.014
0.031
0.035
0.070
0.039
0.025
0.035
0.097
0.023
0.001
0.003
MIN
IMPERIAL
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.028
0.003
0.007
MAX
7