IRF6618 International Rectifier, IRF6618 Datasheet - Page 7
![MOSFET N-CH 30V 30A DIRECTFET](/photos/5/53/55375/irf6618_sml.jpg)
IRF6618
Manufacturer Part Number
IRF6618
Description
MOSFET N-CH 30V 30A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6618.pdf
(11 pages)
Specifications of IRF6618
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.2 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2.35V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 4.5V
Input Capacitance (ciss) @ Vds
5640pF @ 15V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MT
Configuration
Single Quad Drain Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 m Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
29 A
Power Dissipation
2.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
8.1 ns
Minimum Operating Temperature
- 40 C
Rise Time
71 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IRF6618TR
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Company
Part Number
Manufacturer
Quantity
Price
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www.irf.com
DirectFET Outline Dimension, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
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IT9(Ã7I TRIFFC AÃ
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MIN
1.78
6.25
4.80
3.85
0.35
0.78
0.88
0.98
0.63
0.88
2.46
0.59
0.03
0.08
METRIC
DIMENSIONS
MAX
1.82
1.02
1.01
6.35
5.05
3.95
0.45
0.82
0.92
0.67
2.63
0.70
0.08
0.17
0.246
0.189
0.152
0.014
0.031
0.035
0.070
0.039
0.025
0.035
0.097
0.023
0.001
0.003
MIN
IMPERIAL
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.028
0.003
0.007
MAX
7