IRF9Z10PBF Vishay, IRF9Z10PBF Datasheet - Page 4

• Manufacturer Part Number: IRF9Z10PBF
• Description: MOSFET P-CH 50V 6.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z10PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 43000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -6.7A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9Z10PBF

IRF9Z10, SiHF9Z10
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
90118_06
90118_05
600
480
360
240
120
16
20
12
8
4
0
0
10
0
I
D
0
= - 6.7 A
- V
3
DS ,
Q
G
, Total Gate Charge (nC)
Drain-to-Source Voltage (V)
V
6
DS
V
C
C
C
GS
= - 30 V
iss
rss
oss
= 0 V, f = 1 MHz
= C
= C
= C
V
10
gs
gd
DS
ds
9
1
+ C
+ C
= - 48 V
C
C
C
oss
gd
iss
rss
gd
This datasheet is subject to change without notice.
For test circuit
see figure 13
, C
12
ds
Shorted
15
90118_07
90118_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
Fig. 8 - Maximum Safe Operating Area
1
2
0
5
2
5
2
1
-1
1.0
1
- V
- V
175
2
2.0
DS
SD
Operation in this area limited
°
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
C
5
3.0
T
T
Single Pulse
by R
C
J
= 175 °C
= 25 °C
10
DS(on)
S11-0511-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
25
Document Number: 90118
4.0
°
C
2
5.0
V
GS
5
= 0 V
10
100
1
10
ms
µs
ms
10
6.0
µs
2