IRF9Z10PBF Vishay, IRF9Z10PBF Datasheet - Page 7

• Manufacturer Part Number: IRF9Z10PBF
• Description: MOSFET P-CH 50V 6.7A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z10PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 43000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -6.7A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9Z10PBF

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90188.
Document Number: 90118
S11-0511-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
• Compliment N-Channel of D.U.T. for driver
Note
a. V
Note
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
GS
= - 5 V for logic level and - 3 V drive devices
P.W.
SD
DS
waveform
This datasheet is subject to change without notice.
waveform
Peak Diode Recovery dV/dt Test Circuit
Body diode forward drop
Ripple ≤ 5 %
Period
Body diode forward
+
-
Fig. 14 - For P-Channel
• dV/dt controlled by R
• I
• D.U.T. - device under test
current
SD
Diode recovery
controlled by duty factor “D”
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
dV/dt
current transformer
dI/dt
D =
-
g
Period
P.W.
+
I
V
V
SD
GS
DD
= - 10 V
+
-
IRF9Z10, SiHF9Z10
V
DD
a
www.vishay.com/doc?91000
Vishay Siliconix
www.vishay.com
7