PSMN2R0-30PL,127 NXP Semiconductors, PSMN2R0-30PL,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN2R0-30PL,127
• Description: MOSFET N-CH 30V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30PL,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 6810pF @ 12V
• Power - Max: 211W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 211 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4899-5; 934063917127

NXP Semiconductors
PSMN2R0-30PL_1
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
10
10
10
10
10
10
(A)
a
I
1.5
0.5
D
-1
-2
-3
-4
-5
-6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
Sub-threshold drain current as a function of
0
0
min
1
60
typ
2
120
V
GS
003aab271
T
max
j
(V)
( ° C)
03aa27
180
3
Rev. 01 — 24 June 2009
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Drain-source on-state resistance as a function
R
V
(mΩ)
DSon
GS (th)
(V)
3
2
1
0
5
4
3
2
1
0
-60
junction temperature
of drain current; typical values
0
N-channel 30 V 2.1 mΩ logic level MOSFET
20
0
PSMN2R0-30PL
40
max
typ
min
3
60
V
GS
(V) =10 V
60
120
3.5
© NXP B.V. 2009. All rights reserved.
80
003aad250
003a a c982
T
5
I
j
D
(°C)
(A)
4
180
100
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